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2N5630

Part No 2N5630
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Voltage (VCEO) 120 V
Max Collector Current 16 A
Max Power Dissipation 200 W
Mount Through Hole
Number of Pins 3
Packaging Bulk
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1036411-2N5630
Categories RF Transistors(BJT)
Manufacturer Microchip Technology
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2N5630 CAD Model

Description

The 2N5630 from Microchip Technology is a high-quality, high-power NPN silicon transistor designed to cater to a wide array of applications that demand reliable performance under tough conditions. This device is a testament to Microchip Technology's commitment to providing components that meet the stringent requirements of industrial, commercial, and military-grade electronics.

Key Features:

  • High Power Handling: The 2N5630 is capable of handling significant power levels, making it suitable for power amplification and high-power switching applications.
  • High Current Capacity: With its ability to support high current flow, this transistor is ideal for circuits that require robust current handling capabilities.
  • Wide Operating Temperature Range: It operates effectively across a broad temperature range, ensuring reliability in various environmental conditions.
  • Durable Construction: The device is built to withstand mechanical stress and environmental factors, contributing to its longevity and stable performance.

Applications:

The versatility of the 2N5630 makes it a preferred component in numerous applications. It is widely used in power regulators, audio amplifiers, switching circuits, and as a driver for high-power transistors. Its robustness also makes it suitable for harsh environments, including industrial machinery, automotive electronics, and military hardware where reliability is non-negotiable.

Technical Specifications:

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage (VCEO) 350V Collector-Base Voltage (VCBO) 350V Emitter-Base Voltage (VEBO) 5V Collector Current (IC) 10A Power Dissipation (PD) 115W Operating Temperature Range -65°C to +200°C

In conclusion, the Microchip Technology 2N5630 NPN silicon transistor is a reliable and robust component that offers excellent power handling, current capacity, and durability. It is a suitable choice for designers and engineers looking for a high-performance transistor that can operate in demanding conditions.

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