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JAN2N2329S

Part No JAN2N2329S
Manufacturer Microchip Technology
Catalog SCRs - Single
Description SCR 400V TO39
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features SCR 400 V Sensitive Gate Through Hole TO-39 (TO-205AD)
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/276
Package Bulk
Part Status Obsolete
Operating Temperature Range -65°C ~ 125°C
Mounting Through Hole
Package TO-205AD, TO-39-3 Metal Can
Case / Package TO-39 (TO-205AD)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.30.0080
Other Part Number 1086-20726, 1086-20726-MIL
Quantity per package 100
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922281-JAN2N2329S
Ultra Librarian 3D Model Ultra Librarian JAN2N2329S CAD Model

Description

Product Overview: JAN2N2329S by Microchip Technology

The JAN2N2329S is a robust NPN bipolar junction transistor (BJT) developed by Microchip Technology, a leader in microcontroller, mixed-signal, analog, and Flash-IP solutions. This high-quality semiconductor device is designed to meet the stringent requirements of the aerospace industry and is part of Microchip's range of radiation-hardened electronic components.

Constructed with state-of-the-art silicon technology, the JAN2N2329S transistor is engineered to perform reliably in extreme environments. It is capable of withstanding high levels of radiation, making it an ideal choice for space applications, satellite systems, and military hardware where durability and consistent performance are critical.

The JAN2N2329S is characterized by its high switching speeds and low saturation voltage, which contribute to its efficiency in high-frequency applications. The device features a collector-emitter voltage (Vceo) of 80V, collector-base voltage (Vcbo) of 140V, and emitter-base voltage (Vebo) of 7V. With a continuous collector current (Ic) rating of up to 1A, it can handle moderate power levels, making it suitable for a variety of electronic circuits.

This transistor is available in a hermetically sealed package that ensures long-term reliability and protection from environmental factors such as moisture and dust. The JAN2N2329S also meets the Joint Army/Navy (JAN) specifications, which are standards for military and aerospace electronic components that require high reliability and performance under harsh conditions.

Applications for the JAN2N2329S include but are not limited to power regulation circuits, amplifiers, switching devices, and any other systems where high reliability and radiation tolerance are necessary. With Microchip Technology's commitment to quality and performance, customers can trust the JAN2N2329S to deliver exceptional performance and withstand the rigors of demanding applications.

For engineers and designers looking for a reliable transistor that can operate under the stress of high radiation levels and extreme temperatures, the JAN2N2329S from Microchip Technology is an excellent choice that promises durability and consistent operation.

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