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JANSR2N3637

Part No JANSR2N3637
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description PNP TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 34 Weeks
Features Bipolar (BJT) Transistor PNP 175 V 10 µA - 1 W Through Hole TO-39 (TO-205AD)
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/357
Package Bulk
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Through Hole
Package TO-205AD, TO-39-3 Metal Can
Case / Package TO-39 (TO-205AD)
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922312-JANSR2N3637
Ultra Librarian 3D Model Ultra Librarian JANSR2N3637 CAD Model

Description

The JANSR2N3637 is a high-quality, military-grade N-channel MOSFET produced by Microchip Technology, a leading manufacturer of microcontroller, mixed-signal, analog, and Flash-IP integrated circuits. This particular MOSFET is designed to cater to the stringent requirements of aerospace and defense applications, where reliability and performance under extreme conditions are paramount.

Key Features

  • High Reliability: The JANSR2N3637 is built to meet or exceed the requirements of the MIL-PRF-19500/562 specification, ensuring dependable performance in harsh environments.
  • Robust Electrical Characteristics: This device offers excellent on-state resistance and fast switching speeds, making it suitable for high-efficiency power management designs.
  • Hermetically Sealed: The MOSFET is encased in a hermetically sealed package, providing additional protection against moisture, dust, and other environmental factors that could otherwise compromise the device's integrity and performance.
  • Radiation Hardened: It is designed to withstand the effects of radiation, a critical feature for space and other high-radiation environments.
  • Wide Operating Temperature Range: The device can operate over a broad temperature range, ensuring reliability in extreme thermal conditions.

Applications

The JANSR2N3637 is ideal for a variety of high-reliability applications, including:

  • Power supply systems in satellites and spacecraft
  • Avionics and aerospace instrumentation
  • Military hardware and vehicles
  • High-reliability industrial applications

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 100V Gate-to-Source Voltage (V<sub>GS) ±20V Continuous Drain Current (I<sub>D) 18A Power Dissipation (P<sub>D) 1.8W Operating Temperature Range -55°C to +150°C

For those demanding the utmost in reliability and performance, the JANSR2N3637 MOSFET from Microchip Technology is an excellent choice, providing the assurance that your critical applications will function as intended, even in the most challenging conditions.

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