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JANTXV2N2905A

Part No JANTXV2N2905A
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A TO39
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 29 Weeks
Features Bipolar (BJT) Transistor PNP 60 V 600 mA - 800 mW Through Hole TO-39
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/290
Package Bulk
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Through Hole
Package TO-205AD, TO-39-3 Metal Can
Case / Package TO-39
Family Name 2N2905
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 1086-3060, 1086-3060-MIL
Quantity per package 1
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922372-JANTXV2N2905A
Ultra Librarian 3D Model Ultra Librarian JANTXV2N2905A CAD Model

Description

Product Overview: JANTXV2N2905A from Microchip Technology

The JANTXV2N2905A is a robust PNP bipolar junction transistor (BJT) designed and manufactured by Microchip Technology, a leader in the field of microcontroller and analog semiconductors. This high-quality transistor is part of Microchip's extensive range of military-grade electronic components, specifically engineered to meet the stringent requirements of aerospace and defense applications.

Constructed with reliability and performance in mind, the JANTXV2N2905A is compliant with the Joint Army-Navy (JAN) specifications, ensuring it adheres to the rigorous standards for military use. The "V" level of product assurance (JANTXV) signifies that this device has been subjected to even more stringent testing than the already robust JANTX level, providing additional confidence in its performance under extreme conditions.

Featuring a versatile PNP configuration, the JANTXV2N2905A is well-suited for a variety of electronic circuits, including switching and amplifier applications. With its ability to handle high current and power levels, this transistor is an excellent choice for demanding environments where reliability is paramount.

Key specifications of the JANTXV2N2905A include:

  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Current - Collector (Ic) (Max): 600mA
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Operating Temperature Range: -65°C to +200°C

This transistor is encapsulated in a TO-39 metal can package, which provides excellent thermal performance and shielding from environmental factors. The robustness of the packaging, combined with the device's inherent durability, makes the JANTXV2N2905A an ideal choice for mission-critical applications where failure is not an option.

Microchip Technology's commitment to quality ensures that the JANTXV2N2905A transistor will perform reliably over its intended lifespan, offering designers a trusted component for use in high-reliability systems. Whether it's used in communication equipment, avionics, or other military-grade electronics, the JANTXV2N2905A is designed to exceed expectations and deliver consistent, high-level performance.

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