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TN5335K1-G

Part No TN5335K1-G
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 350V 0.11A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 350V
Continuous Drain Current at 25°C 110mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 15 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23 (TO-236AB)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1110811-TN5335K1-G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TN5335K1-G CAD Model

Description

The TN5335K1-G is a cutting-edge transistor component manufactured by Microchip Technology, renowned for its high-quality semiconductor products and solutions. This particular transistor is engineered to deliver superior performance in a wide range of electronic applications, making it a versatile choice for designers and engineers looking to enhance their circuit designs.

Key Features:

  • High Reliability: The TN5335K1-G is built to meet the stringent quality standards of Microchip Technology, ensuring a reliable and stable performance across its lifespan.
  • Efficient Power Management: This transistor is designed for optimal power management, which is crucial for energy-sensitive applications, contributing to overall system efficiency.
  • Versatile Applications: It is suitable for a wide variety of uses, including switching and amplification in consumer electronics, industrial systems, and communication devices.
  • Compact Form Factor: The small footprint of the TN5335K1-G allows for integration into space-constrained designs without sacrificing performance.
  • Robust Thermal Performance: With an excellent thermal conduction capability, this transistor maintains operational integrity even under high temperature conditions.

Technical Specifications:

  • Type: NPN/PNP Bipolar Transistor
  • Package: TO-92
  • Collector-Emitter Voltage (Vceo): Specified according to the datasheet
  • Collector Current (Ic): Specified according to the datasheet
  • Power Dissipation (Pd): Specified according to the datasheet
  • DC Current Gain (hFE): Specified according to the datasheet

The TN5335K1-G transistor by Microchip Technology is a testament to the company's commitment to providing high-quality electronic components. Whether you're working on a simple DIY project or a complex industrial system, this transistor is designed to offer reliable and efficient performance. For detailed specifications and application notes, it is recommended to consult the official datasheet provided by Microchip Technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8023 $60.1725
180+ $0.6584 $118.5120
275+ $0.6378 $175.3950
375+ $0.6172 $231.4500
485+ $0.5966 $289.3510
650+ $0.5349 $347.6850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,360 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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