The MT41K1G8TRE-125:E is a high-performance DDR3L SDRAM component manufactured by Micron Technology Inc. This memory module is designed for applications that require a balance of low power consumption and high-speed data transfer. It is engineered to meet the demands of modern computing systems while minimizing energy usage.

Applications

• Laptop computers
• Ultrabooks
• Embedded systems
• Mobile devices
• Industrial automation

Features

• DDR3L technology for low voltage operation (1.35V)
• Capacity of 1Gb
• 8-bit data bus width
• High-speed data transfer rates up to 1600 Mbps
• On-die termination (ODT) for improved signal integrity

Benefits

• Extended battery life in portable devices
• Reduced system power consumption
• Improved thermal management
• Enhanced system stability and reliability
• Increased data throughput for demanding applications

Additional Details

The MT41K1G8TRE-125:E operates at a low voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 SDRAM. It is designed with advanced signal integrity features, such as on-die termination, to ensure reliable data transfer at high speeds. The module incorporates thermal management techniques to maintain stable operation under varying load conditions. It is manufactured using high-quality materials and undergoes rigorous testing to meet industry standards. Proper installation and cooling are recommended for optimal performance. Detailed technical specifications, including timing characteristics, voltage ranges, and thermal guidelines, are available in the official datasheet provided by Micron Technology Inc. The MT41K1G8TRE-125:E is a versatile memory solution suitable for a wide range of applications where low power consumption and high performance are critical. Its architecture allows for efficient data transfer and processing, making it an ideal choice for demanding computing environments, especially in portable devices.