The Microsemi Corporation 2N6796 is an N-channel MOSFET transistor designed for use in a wide range of applications, including discrete semiconductor products.

• Power Dissipation: The transistor has a maximum power dissipation of 800mW and a maximum drain-source breakdown voltage of 100V.
• Current: It has a continuous drain current of 8A and a maximum Rds on of 180mOhm @ 5A and 10V.
• Voltage: The transistor has a gate-source voltage of ±20V and a gate-source voltage(th) of 4V @ 250mA.
• Gate Charge: It has a gate charge of 6.34nC @ 10V and is packaged in a TO-205AF metal can.
• Mounting: The 2N6796 is mounted through a hole and can operate in a temperature range of -55°C to 150°C.
• Popularity and Status: The popularity of this product is medium, and the supply and demand status is limited.