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Same model may have multiple batches, images only for reference.
APT18F60B Real Image
Same model may have multiple batches, images only for reference.

APT18F60B

Part No APT18F60B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18A TO-247
Datasheet
APT18F60B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 335W (Tc)
Maximum Rds On at Id,Vgs 390 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 051440-APT18F60B
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT18F60B CAD Model

Description

APT18F60B

The APT18F60B is a cutting-edge power transistor designed for high-capacity power regulation applications. It delivers remarkable performance in energy conversion and regulation tasks.

  • High efficiency in power conversion
  • Robust design for heavy-duty applications
  • Optimal thermal management

Applications:

  • Power management solutions
  • Heavy machinery motor drive units
  • Industrial inverter systems

Features & Benefits:

  • Ensures superior power conversion efficiency
  • Performant under high thermal stress conditions
  • Extended operating temperatures for demanding environments

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