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Same model may have multiple batches, images only for reference.
APT75GN120LG Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT75GN120LG

Part No APT75GN120LG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 200A 833W TO264 / Trans IGBT Chip N-CH 1200V 200A 833000mW 3-Pin(3+Tab) TO-264 Tube
Datasheet
APT75GN120LG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 200A
Current - Collector Pulsed (Icm) 225A
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 833W
Switching Energy 8620μJ (on), 11400μJ (off)
Input Type Standard
Gate Charge 425nC
Td (on/off) @ 25°C 60ns/620ns
Test Condition 800V, 75A, 1 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-264-3, TO-264AA
Manufacturer Package TO-264 [L]
Win Source Part Number 768714-APT75GN120LG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT75GN120L
Introduction Date September 10, 1996
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian APT75GN120LG CAD Model

Description

The Microsemi Corporation APT75GN120LG is an IGBT designed for use in electronic circuits.

  • Voltage Rating: 1200V
  • Current Rating: 200A
  • Power Rating: 833W
  • Switching Energy: 8620μJ (on), 11400μJ (off)
  • Package: TO-264-3, TO-264AA
  • Operating Temperature Range: -55°C to 150°C

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