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Same model may have multiple batches, images only for reference.
JAN2N1893S Real Image
Same model may have multiple batches, images only for reference.

JAN2N1893S

Part No JAN2N1893S
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN LOW POWER SILICON TRANSISTOR | TRANS NPN 80V 0.5A TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) at Ib, Ic 5V at 15mA, 150mA
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 40 at 150mA, 10V
Maximum Power 3W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191376-JAN2N1893S
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JAN2N1893S CAD Model

Description

The Microsemi Corporation JAN2N1893S is a NPN transistor that has a current - collector (Ic) (maximum) of 500mA and a voltage - collector emitter breakdown (maximum) of 80V.

  • Current - Collector Cutoff (Max): 10μA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Popularity: medium
  • Supplier Device Package: TO-39 (TO-205AD)
  • Temperature Range - Operating: -65°C ~ 200°C
  • Maximum Power: 3W
  • Supply and Demand Status: limited
  • Packaging: bulk

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13+ $9.1684 $119.1892
20+ $8.8820 $177.6400
27+ $8.5954 $232.0758
35+ $8.3088 $290.8080
47+ $7.4493 $350.1171
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Availability: 220 pieces
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