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JAN2N2369A

Part No JAN2N2369A
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN BIPOLAR TRANSISTOR | TRANS NPN 15V TO18
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 15V
Vce Saturation (Maximum) at Ib, Ic 450mV at 10mA, 100mA
Current - Collector Cutoff (Maximum) 400nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 100mA, 1V
Maximum Power 360mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191380-JAN2N2369A
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JAN2N2369A CAD Model

Description

The JAN2N2369A is a high-reliability NPN silicon switching transistor manufactured by Microsemi Corporation. It is designed and manufactured to meet stringent military and aerospace requirements for performance in harsh environments. This transistor is primarily used in high-speed switching applications where reliability and consistent performance are paramount.

Applications

  • High-speed switching circuits
  • Logic circuits
  • Core drivers
  • High-reliability military and aerospace equipment
  • Pulse amplifiers

Features

  • NPN Silicon Transistor
  • JANTX Qualification (High-Reliability Screening)
  • High Switching Speed
  • Low Saturation Voltage
  • High Breakdown Voltage
  • Hermetically Sealed Package

Benefits

  • Guaranteed Performance in Harsh Environments
  • Long-Term Reliability and Stability
  • Improved System Performance Due to Consistent Characteristics
  • Reduced Downtime and Maintenance Costs

Specifications

The JAN2N2369A typically features a collector-emitter breakdown voltage (VCEO) of 15V, a collector current (IC) of 0.2A, and a power dissipation of approximately 0.36W (depending on package and temperature conditions). Its DC current gain (hFE) is typically in the range of 20 to 100. The device is packaged in a hermetically sealed TO-18 or similar through-hole package, providing environmental protection and long-term stability. The operating junction temperature range is typically from -65°C to +200°C. The saturation voltage is low, minimizing power loss in switching applications. It has a very fast switching time, suitable for high speed applications.

The JAN2N2369A's high-reliability screening ensures that it can withstand harsh environmental conditions, making it suitable for aerospace and military applications. The hermetically sealed package protects the device from moisture and other contaminants, extending its lifespan. The low saturation voltage reduces power dissipation and improves efficiency. Because of its high speed switching capabilities and ruggedness, it is an excellent solution for high speed switching applications requiring long-term reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.0208 $50.1040
13+ $8.2222 $106.8886
19+ $7.9653 $151.3407
26+ $7.7083 $200.4158
34+ $7.4514 $253.3476
45+ $6.6805 $300.6225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,310 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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