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Same model may have multiple batches, images only for reference.
JAN2N3792
Same model may have multiple batches, images only for reference.

JAN2N3792

Part No JAN2N3792
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description PNP HIGH POWER SILICON TRANSISTOR
Datasheet
JAN2N3792 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/379
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 10A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) @ Ib, Ic 2.5V @ 2A, 10A
Current - Collector Cutoff (Maximum) 5mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 30 @ 3A, 2V
Power - Max 5W
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-3
Manufacturer Package TO-3 (TO-204AA)
Win Source Part Number 1191389-JAN2N3792
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Balance
Family Name 2N3792
Introduction Date January 06, 1998
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian JAN2N3792 CAD Model

Description

The Microsemi Corporation JAN2N3792 is a PNP transistor that is designed for high power applications.

  • Grade: Military-grade
  • Series: MIL-PRF-19500/379
  • Win Source Part Number: 1191389-JAN2N3792
  • Manufacturer Homepage: www.microsemi.com
  • Maximum Power Rating: 5W
  • Maximum Collector Current: 10A

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