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Same model may have multiple batches, images only for reference.
JAN2N6059
Same model may have multiple batches, images only for reference.

JAN2N6059

Part No JAN2N6059
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 100V 12A TO3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 12A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 3V @ 120mA, 12A
Collector Cut-off Current(Max) 1mA
Typical Gain (hFE) (Min) 1000 @ 6A, 3V
Maximum Power Dissipation 150W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-204AA (TO-3)
Win Source Part Number 138909-JAN2N6059
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N6059 CAD Model

Description

The Microsemi Corporation 138909-JAN2N6059 is a NPN Darlington transistor that is ideal for use in discrete semiconductor products. This transistor has a maximum collector-emitter breakdown voltage of 100V and a maximum current collector of 12A.

  • Collector cut-off current: 1mA.
  • Typical gain: 1000 @ 6A and 3V.
  • Maximum power dissipation: 150W.
  • Low Vce (sat): 3V @ 120mA and 12A.
  • Temperature range: -55°C to 175°C (TJ).
  • Package: TO-204AA (TO-3).
  • Supplied in: bulk.
  • Supply and demand status: limited.
  • Quantity per package: one unit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.0367 $50.1835
13+ $8.2353 $107.0589
19+ $7.9779 $151.5801
26+ $7.7206 $200.7356
34+ $7.4632 $253.7488
45+ $6.6912 $301.1040
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Availability: 1,000 pieces
MOQ: 5 pcs
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