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Same model may have multiple batches, images only for reference.
JAN2N6306
Same model may have multiple batches, images only for reference.

JAN2N6306

Part No JAN2N6306
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 250V 8A TO3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 250V
Max Vce (sat) 5V @ 2A, 8A
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 15 @ 3A, 5V
Maximum Power Dissipation 125W
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-204AA (TO-3)
Win Source Part Number 142430-JAN2N6306
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N6306 CAD Model

Description

The Microsemi Corporation JAN2N6306 is a medium-popularity electronic component manufactured by Microsemi Corporation. This component is commonly used in power management systems, such as voltage regulators and power supplies.

  • The JAN2N6306 is a: high-performance transistor that can handle large amounts of current with ease.
  • It is a: reliable and efficient component that can be used in a wide range of applications.
  • Transistor polarity: NPN.
  • Maximum collector-emitter breakdown voltage: 250V.
  • Maximum power dissipation: 125W.
  • Typical gain: 15 @ 3A, 5V.

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