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Same model may have multiple batches, images only for reference.
JAN2N6798 Real Image
Same model may have multiple batches, images only for reference.

JAN2N6798

Part No JAN2N6798
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-205AF TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/557
Packaging Bulk
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 42.07nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 800mW (Ta), 25W (Tc)
Rds On (Maximum) @ Id, Vgs 420 mOhm @ 5.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-39
Package TO-205AF Metal Can
Win Source Part Number 762315-JAN2N6798
Popularity Medium
Supply and Demand Status Limited
Family Name 2N6798
Introduction Date September 17, 2008
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian JAN2N6798 CAD Model

Description

The Microsemi Corporation JAN2N6798 is a MOSFET device.

  • Category: Discrete Semiconductor Products
  • Package: TO-39
  • Maximum Power Dissipation: 800mW (Ta), 25W (Tc)

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