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JANTX2N6800

Name: JANTX2N6800
Brand: Microsemi Corporation
SKU: 608840
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	JANTX2N6800
Manufacturer	Microsemi Corporation
Catalog	FETs - Single
Description	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A) \| MOSFET N-CH
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Bulk
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	400V
Id - Continuous Drain Current	3A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1.1Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	34.75nC at 10V
Gate Source Voltage (Maximum)	±20V
Power Dissipation (Maximum)	800mW, 25W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Manufacturer Package	TO-205AD, TO-39-3 Metal Can
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	1191528-JANTX2N6800
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian JANTX2N6800 CAD Model

Alternative Products

Description

The JANTX2N6800 is an N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 400V and a continuous drain current of 3A.

Manufacturer: Microsemi Corporation
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current: 3A
Gate-Source Voltage: ±20V
Gate-Source Voltage(th): 4V @ 250μA
Power Dissipation (Maximum): 800mW, 25W
Rds On (maximum) at Id, Vgs: 1.1Ohm @ 3A, 10V
Packaging: Bulk
Status: Limited supply and demand status with a medium popularity
MSL Level: 1 (Unlimited)
Manufacturer Homepage: www.irf.com

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