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Same model may have multiple batches, images only for reference.
JANTXV2N5681 Real Image
Same model may have multiple batches, images only for reference.

JANTXV2N5681

Part No JANTXV2N5681
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 1A TO39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/583
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 10μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 40 @ 250mA, 2V
Power - Max 1W
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-205AD, TO-39-3 Metal Can
Manufacturer Package TO-39 (TO-205AD)
Win Source Part Number 762262-JANTXV2N5681
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name 2N5681
Introduction Date January 06, 1998
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian JANTXV2N5681 CAD Model

Description

The Microsemi Corporation 2N5681 is a military-grade NPN transistor with a maximum power of 1W.

  • Package: TO-205AD, TO-39-3 metal can
  • Collector Current (Ic): 1A
  • Collector-Emitter Breakdown Voltage (Vce): 100V
  • DC Current Gain (hFE): 40 @ 250mA, 2V

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