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Same model may have multiple batches, images only for reference.
MRF5812G Real Image
Same model may have multiple batches, images only for reference.

MRF5812G

Part No MRF5812G
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 15V 5GHZ 8SO
Datasheet
MRF5812G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
Gain 13dB ~ 15.5dB
Power - Max 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Standard Package 2,500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 644163-MRF5812G
Ultra Librarian 3D Model Ultra Librarian MRF5812G CAD Model

Description

The MRF5812G is a bipolar RF transistor from Microsemi Corporation.

  • Type: NPN type bipolar RF transistor
  • Mounting Type: Surface Mount
  • Power Rating: 1.25W
  • Collector-Emitter Breakdown Voltage: 15V
  • Collector Current: 200mA
  • Gain: 13dB to 15.5dB
  • DC Current Gain: 50 @ 50mA and 5V
  • Transition Frequency: 5GHz
  • Noise Figure: 2dB to 3dB @ 500MHz
  • Package: Bulk
  • Standard Package Quantity: 2,500 pieces
  • Status: Obsolete
  • Application: RF applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $80.0000 $80.0000
2+ $77.5000 $155.0000
3+ $75.0000 $225.0000
4+ $72.5000 $290.0000
5+ $65.0000 $325.0000
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Availability: 1,294 pieces
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