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Same model may have multiple batches, images only for reference.
MRF581A Microsemi Corporation
Same model may have multiple batches, images only for reference.

MRF581A

Part No MRF581A
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 15V 5GHZ MICRO X
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 3dB ~ 3.5dB @ 500MHz
Gain 13dB ~ 15.5dB
Power - Max 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case Micro-X ceramic (84C)
Supplier Device Package Micro-X ceramic (84C)
Base Product Number MRF581
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 644165-MRF581A
Ultra Librarian 3D Model Ultra Librarian MRF581A CAD Model

Description

The MRF581A is a bipolar RF transistor from Microsemi Corporation.

  • Application: Bipolar RF transistors
  • Power Rating: 1.25W
  • Collector-Emitter Breakdown Voltage: 15V
  • Maximum Collector Current (Ic): 200mA
  • Gain: 13dB to 15.5dB
  • Transistor Type: NPN
  • DC Current Gain (hFE): 90 @ 50mA and 5V
  • Operating Temperature: 150°C
  • Package: Bulk (500 pieces)
  • Moisture Sensitivity Level (MSL): 1 (unlimited)
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6008 $59.8184
55+ $2.1340 $117.3700
84+ $2.0674 $173.6616
116+ $2.0006 $232.0696
150+ $1.9339 $290.0850
200+ $1.7339 $346.7800
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Availability: 5,300 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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