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Same model may have multiple batches, images only for reference.
MS2473
Same model may have multiple batches, images only for reference.

MS2473

Part No MS2473
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 65V 1.09GHZ M112 / RF Transistor NPN 65V 46A 1.09GHz 2300W Chassis Mount M112
Datasheet
MS2473 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 1.09GHz
Gain 6dB
Power - Max 2300W
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A, 5V
Current - Collector (Ic) (Max) 46A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M112
Supplier Device Package M112
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1350746-MS2473
Ultra Librarian 3D Model Ultra Librarian MS2473 CAD Model

Description

The Microsemi Corporation 1350746-MS2473 is a NPN bipolar RF transistor designed for use in discrete semiconductor products.

  • Power - Max: 2300W
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 6dB
  • Frequency - Transition: 1.09GHz
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M112
  • Supplier Device Package: M112
  • Lifecycle Status: Obsolete
  • Current - Collector (Ic) (Max): 46A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V

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