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SI4952DY-T1-GE3

Part No SI4952DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 680pF @ 13V
Maximum Power Dissipation 2.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 104465-SI4952DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4952DY-T1-GE3 CAD Model

Description

The SI4952DY-T1-GE3 is an electronic component manufactured by Vishay.

  • Applications: industrial and power management
  • Win Source Part Number: 104465-SI4952DY-T1-GE3
  • Supply and Demand Status: balanced
  • Type: dual N-channel FET with a logic level gate feature
  • Maximum Power Dissipation: 2.8W
  • Continuous Drain Current at 25°C: 8A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 680pF @ 13V
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,007 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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