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Same model may have multiple batches, images only for reference.
TAN250A
Same model may have multiple batches, images only for reference.

TAN250A

Part No TAN250A
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 60V 1.215GHZ 55AW / RF Transistor NPN 60V 30A 960MHz ~ 1.215GHz 575W Chassis Mount 55AW
Datasheet
TAN250A Datasheet
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition 960MHz ~ 1.215GHz
Gain 6.2db ~ 7dB
Power - Max 575W
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V
Current - Collector (Ic) (Max) 30A
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package 55AW
Supplier Device Package 55AW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 150-TAN250A,TAN250A-ND
Standard Package 1
Win Source Part Number 1325625-TAN250A
Ultra Librarian 3D Model Ultra Librarian TAN250A CAD Model

Description

The TAN250A is an NPN bipolar transistor designed for RF applications.

  • Maximum Power: 575W
  • Maximum Collector Emitter Breakdown Voltage: 60V
  • Maximum Collector Current (Ic): 30A
  • Gain: 6.2db ~ 7dB
  • DC Current Gain (hFE): 10 @ 1A, 5V
  • Frequency Transition Range: 960MHz ~ 1.215GHz
  • Mounting: Chassis Mount Technology
  • Package: 55AW
  • Operating Temperature Range: 200°C (TJ)
  • Manufacturer: Microsemi Corporation
  • Packaging: Bulk

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