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ZHL-100W-GAN+

Part No ZHL-100W-GAN+
Manufacturer Mini-Circuits
Catalog RF Amplifiers
Description HP LINEAR AMP, 20 MHZ TO 500 MHZ
Datasheet
Sample
Rohs State rohs
ECAD Module
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Description

The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a maximum junction temperature of 250°C translating into higher operating temperatures without adversely affecting the MTBF.

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