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NT5CB512M8DN-DI

Part No NT5CB512M8DN-DI
Manufacturer NANYA
Catalog DDR
Description DDR3-1600 512Mx8 (4Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 940898-NT5CB512M8DN-DI
Series *
Ultra Librarian 3D Model Ultra Librarian NT5CB512M8DN-DI CAD Model

Description

The NT5CB512M8DN-DI is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) module manufactured by Nanya Technology Corporation. It is designed for use in a wide range of applications, including desktops, laptops, servers, and embedded systems, where high bandwidth and low latency are critical. This memory module offers a balance of speed, capacity, and power efficiency.

Applications:

  • Desktops and Laptops
  • Servers
  • Embedded Systems
  • Networking Equipment
  • Graphics Cards

Features:

  • Capacity: 512MB (512M x 8)
  • DDR3 Technology: Utilizes DDR3 architecture for high data transfer rates.
  • Data Transfer Rate: Supports data transfer rates up to 1600 MT/s.
  • Operating Voltage: Operates at a low voltage of 1.5V, contributing to energy efficiency.
  • Interface: Standard DDR3 interface for compatibility with a wide range of platforms.
  • Package: FBGA (Fine-pitch Ball Grid Array) package for improved thermal performance and space efficiency.
  • RoHS Compliant: Complies with RoHS (Restriction of Hazardous Substances) standards.

Benefits:

  • High Bandwidth: Enables fast data access and improves system performance.
  • Low Latency: Reduces delays in data retrieval, leading to a more responsive system.
  • Energy Efficiency: Low operating voltage minimizes power consumption and heat generation.
  • Reliability: Designed for high reliability and stability.
  • Compatibility: Compatible with a wide range of DDR3-supporting platforms.

The NT5CB512M8DN-DI is a reliable and efficient memory solution for demanding applications. Its DDR3 architecture ensures high bandwidth and low latency, while its low operating voltage contributes to energy savings. The FBGA package provides excellent thermal performance and space efficiency. It is a suitable choice for systems requiring stable and high-performance memory.

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