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Same model may have multiple batches, images only for reference.
BC807-40QBZ Real Image
Same model may have multiple batches, images only for reference.

BC807-40QBZ

Part No BC807-40QBZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS 45V 0.5A DFN1110D-3 / Bipolar (BJT) Transistor 45 V 500 mA 80MHz 350 mW Surface Mount, Wettable Flank DFN1110D-3
Datasheet
BC807-40QBZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Power - Max 350 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 934660964147,1727-BC807-40QBZDKR,1727-BC807-40QBZCT,1727-BC807-40QBZTR
Standard Package 5,000
Win Source Part Number 1164239-BC807-40QBZ
Ultra Librarian 3D Model Ultra Librarian BC807-40QBZ CAD Model

Description

The BC807-40QBZ is a single NPN bipolar transistor from Nexperia USA Inc.

  • Series: automotive, AEC-Q101
  • Package: 3-XDFN exposed pad
  • Mounting: surface-mount technology
  • Maximum Power: 350 mW
  • Maximum Voltage Collector Emitter Breakdown: 45 V
  • Maximum Current Collector: 500 mA
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Suitability: suitable for use in discrete semiconductor products, specifically for transistors - bipolar (BJT) - single.

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