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Same model may have multiple batches, images only for reference.
BSH202,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSH202,215

Part No BSH202,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 520MA SOT23
Datasheet
BSH202,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 520mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.9V @ 1mA
Max Gate Charge 2.9nC @ 10V
Max Input Capacitance 80pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 417mW (Ta)
Maximum Rds On at Id,Vgs 900 mOhm @ 280mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024376-BSH202,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSH202,215 CAD Model

Description

The Nexperia BSH202,215 is a P-channel MOSFET that features a drain-source breakdown voltage of 30V and a continuous drain current of 520mA (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 520mA (Ta)
  • Gate-Source Threshold Voltage: 1.9V @ 1mA
  • Maximum Gate Charge: 2.9nC @ 10V
  • Maximum Rds On: 900 mOhm @ 280mA, 10V
  • Package: TO-236AB (SOT23)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
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Availability: 34,550 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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