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Same model may have multiple batches, images only for reference.
BSP250,115 NXP
Same model may have multiple batches, images only for reference.

BSP250,115

Part No BSP250,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3A SOT223
Datasheet
BSP250,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Package Tape & Reel
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 20 V
Power Dissipation (Max) 1.65W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Base Product Number BSP250
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 744913-BSP250,115
Ultra Librarian 3D Model Ultra Librarian BSP250,115 CAD Model

Description

The 744913-BSP250,115 is a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for various electronic applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 3A
  • Maximum On-Resistance: 250mOhm
  • Gate-Source Threshold Voltage: 2.8V
  • Installation: Surface mount
  • Package: TO-261-4
  • Operating Temperature: Up to 150°C
  • Manufacturer: Nexperia USA Inc.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1730 $52.7850
105+ $0.9625 $101.0625
165+ $0.9324 $153.8460
225+ $0.9023 $203.0175
290+ $0.8722 $252.9380
385+ $0.7820 $301.0700
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Availability: 9,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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