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Same model may have multiple batches, images only for reference.
BSS123/LF1R
Same model may have multiple batches, images only for reference.

BSS123/LF1R

Part No BSS123/LF1R
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 150MA TO236AB
Datasheet
BSS123/LF1R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series TrenchMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V
Power Dissipation (Max) 250mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 850774-BSS123/LF1R
Ultra Librarian 3D Model Ultra Librarian BSS123/LF1R CAD Model

Description

The 850774-BSS123/LF1R is a N-Channel MOSFET transistor from Nexperia USA Inc.

  • Series: TrenchMOS™
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 150mA @ 25°C
  • On-Resistance (Rds On): 6Ohm @ 120mA and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 2.8V @ 1mA
  • Power Dissipation (Max): 250mW
  • Mounting Type: Surface Mount
  • Package: TO-236-3, SC-59, SOT-23-3
  • Input Capacitance (Ciss): 40pF @ 25V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 150°C

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