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Same model may have multiple batches, images only for reference.
BUK624R5-30C,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK624R5-30C,118

Part No BUK624R5-30C,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A DPAK
Datasheet
BUK624R5-30C,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 4707pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1025155-BUK624R5-30C,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK624R5-30C,118 CAD Model

Description

The Nexperia USA Inc. BUK624R5-30C,118 is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Manufacturer: Nexperia USA Inc.
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 90A @ 25°C
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate Charge: 78nC @ 10V
  • Maximum Input Capacitance: 4707pF @ 25V
  • Maximum Rds On: 4.5 mOhm @ 25A, 10V
  • Package: DPAK
  • Use: Suitable for use in discrete semiconductor products.

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