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Same model may have multiple batches, images only for reference.
BUK7610-55AL,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK7610-55AL,118

Part No BUK7610-55AL,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
BUK7610-55AL,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 6280pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025256-BUK7610-55AL,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7610-55AL,118 CAD Model

Description

The BUK7610-55AL,118 is an N-channel MOSFET from Nexperia designed for use in discrete semiconductor products.

  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge @ 10V: 124nC
  • Maximum Input Capacitance @ 25V: 6280pF
  • Maximum Rds On @ 25A, 10V: 10 mOhm
  • Package: D2PAK
  • Suitable for: Use in a variety of applications

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14+ $17.4959 $244.9426
18+ $16.9127 $304.4286
23+ $15.1628 $348.7444
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