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XPH3R114MC,L1XHQ

Part No XPH3R114MC,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 100A 8SOP / P-Channel 40 V 100A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 10 V
Power Dissipation (Max) 960mW (Ta) , 170W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Base Product Number XPH3R114
Standard Package 5,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339674-XPH3R114MC,L1XHQ
Ultra Librarian 3D Model Ultra Librarian XPH3R114MC,L1XHQ CAD Model

Description

The XPH3R114MC,L1XHQ is a P-channel MOSFET transistor that is designed for use in a wide range of industrial and automotive applications.

  • Drain-to-Source Voltage: 40V
  • Maximum Power Dissipation: 960mW
  • Mounting Type: Surface Mount
  • Packaging: Tape and Reel
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Continuous Drain Current: 100A

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.2944 $50.4768
54+ $1.8826 $101.6604
83+ $1.8238 $151.3754
114+ $1.7650 $201.2100
147+ $1.7061 $250.7967
197+ $1.5296 $301.3312
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,060 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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