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Same model may have multiple batches, images only for reference.
BUK952R8-30B,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK952R8-30B,127

Part No BUK952R8-30B,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO220AB
Datasheet
BUK952R8-30B,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 89nC @ 5V
Max Input Capacitance 10185pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025354-BUK952R8-30B,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK952R8-30B,127 CAD Model

Description

The Nexperia USA Inc. electronic component is a high-quality MOSFET that can be used in various electronic applications.

  • Win Source Part Number: 1025354-BUK952R8-30B,127
  • Package: TO-220AB
  • Product Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Product Category: Discrete Semiconductor Products
  • Product Status: Obsolete (EOL)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A (Tc)
  • Maximum Rds On @ Id,Vgs: 2.4 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±15V

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