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Same model may have multiple batches, images only for reference.
BUK9610-100B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9610-100B,118

Part No BUK9610-100B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A D2PAK
Datasheet
BUK9610-100B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 86nC @ 5V
Max Input Capacitance 11045pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025376-BUK9610-100B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9610-100B,118 CAD Model

Description

The Nexperia USA Inc. BUK9610-100B,118 is a N-channel MOSFET type IC with a maximum power dissipation of 300W (Tc).

  • Channel Type: N-channel
  • Power Dissipation: 300W (Tc) (Max)
  • Drive Voltage: 5V and 10V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Gate Charge: 86nC @ 5V (Max)
  • Input Capacitance: 11045pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D2PAK
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A (Tc)
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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