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Same model may have multiple batches, images only for reference.
BUK962R8-30B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK962R8-30B,118

Part No BUK962R8-30B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK
Datasheet
BUK962R8-30B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 89nC @ 5V
Max Input Capacitance 10185pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025387-BUK962R8-30B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK962R8-30B,118 CAD Model

Description

The Nexperia USA Inc. BUK962R8-30B,118 is an N-channel MOSFET transistor that comes in a D2PAK package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Rds On @ Id,Vgs: 2.4 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±15V
  • Maximum Input Capacitance: 10185pF @ 25V
  • Maximum Gate Charge: 89nC @ 5V
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 300W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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