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Same model may have multiple batches, images only for reference.
BUK962R8-60E,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK962R8-60E,118

Part No BUK962R8-60E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK
Datasheet
BUK962R8-60E,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 92nC @ 5V
Max Input Capacitance 15600pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 324W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025388-BUK962R8-60E,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK962R8-60E,118 CAD Model

Description

The Nexperia USA Inc. BUK962R8-60E,118 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-channel MOSFET
  • Use: Designed for use in discrete semiconductor products
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 120A @ 25°C
  • Package: D2PAK
  • Maximum Power Dissipation: 324W
  • Gate-Source Threshold Voltage: 2.1V @ 1mA
  • Maximum Gate Charge: 92nC @ 5V
  • Maximum Rds On: 2.5 mOhm @ 25A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Input Capacitance: 15600pF @ 25V

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3+ $28.5216 $85.5648
5+ $23.4026 $117.0130
8+ $22.6715 $181.3720
11+ $21.9404 $241.3444
14+ $21.2081 $296.9134
19+ $19.0148 $361.2812
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