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MJD2873J

Part No MJD2873J
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V
Power - Max 1.6 W
Frequency - Transition 65MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number MJD2873
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1377133-MJD2873J
Ultra Librarian 3D Model Ultra Librarian MJD2873J CAD Model

Description

The MJD2873J is an NPN Bipolar Transistor from Nexperia USA Inc.

  • Maximum Collector Current: 2A
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Temperature Range: Up to 150°C
  • Transition Frequency: 65MHz
  • DC Current Gain (hFE): 120 @ 500mA and 2V
  • Vce Saturation: 300mV @ 50mA base current and 1A collector current
  • Maximum Collector Cutoff Current: 100nA

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