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MMSTA13-7-F

Part No MMSTA13-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 300mA
Voltage - Collector Emitter Breakdown (Maximum) 30V
Vce Saturation (Maximum) @ Ib, Ic 1.5V @ 100μA, 100mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 10000 @ 100mA, 5V
Power - Max 200mW
Frequency - Transition 125MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package SC-70, SOT-323
Manufacturer Package SOT-323
Win Source Part Number 1225398-MMSTA13-7-F
Manufacturer Homepage www.diodes.com
Family Name MMSTA13
Introduction Date August 24, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMSTA13-7-F CAD Model

Description

Product Overview: MMSTA13-7-F by Diodes Incorporated

The MMSTA13-7-F is a high-performance NPN transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is part of Diodes Incorporated's extensive range of small signal transistors, which are known for their reliability and efficiency in various electronic applications.

Key Features

  • Type: NPN Bipolar Transistor
  • Package: SOT-323, a small surface-mount package that is suitable for automated assembly processes and helps in saving board space.
  • Configuration: Single transistor, allowing for flexibility in circuit design.
  • Collector-Emitter Voltage (Vceo): 30V, which provides a good margin for voltage handling in a variety of circuits.
  • Collector Current (Ic): 500mA, indicating the maximum continuous current the transistor can handle.
  • Power Dissipation (Pd): 225mW, which defines the amount of power the device can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 300, ensuring a sufficient level of amplification in most signal processing applications.
  • Operating Temperature Range: -55°C to +150°C, making it suitable for use in a wide range of environmental conditions.

Applications

The MMSTA13-7-F transistor is versatile and can be used in various applications, including:

  • Switching and amplification in consumer electronics
  • Driver stages in audio amplifiers
  • Signal processing in communication devices
  • Voltage regulation circuits
  • Power management in portable devices

Quality and Compliance

Diodes Incorporated is committed to delivering high-quality products that comply with international standards. The MMSTA13-7-F transistor is no exception, as it is produced with rigorous quality control procedures and is compliant with RoHS directives, ensuring that it meets environmental and safety standards.

Conclusion

In summary, the MMSTA13-7-F from Diodes Incorporated is a reliable and compact NPN transistor that offers excellent performance for a wide range of electronic applications. Its small form factor, combined with its robust electrical characteristics, make it an ideal choice for designers looking for a versatile component that can handle significant power in a small package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1711 $50.4745
715+ $0.1404 $100.3860
1,105+ $0.1361 $150.3905
1,520+ $0.1317 $200.1840
1,965+ $0.1273 $250.1445
2,630+ $0.1141 $300.0830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,030 pieces
MOQ: 645 pcs
Order Increment : 1 pcs
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