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Same model may have multiple batches, images only for reference.
PBLS2022D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS2022D,115

Part No PBLS2022D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PNP PREBIAS/PNP 6TSOP
Datasheet
PBLS2022D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 PNP Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 1.8A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 20V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V / 200 @ 1A, 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 130MHz
Maximum Power Dissipation 760mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086367-PBLS2022D,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS2022D,115 CAD Model

Description

The Nexperia PBLS2022D,115 is a 1 PNP Pre-Biased, 1 PNP transistor with a frequency transition of 130MHz.

  • Frequency Transition: 130MHz
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • Maximum Current Collector: 100mA, 1.8A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 20V
  • Maximum Power Dissipation: 760mW
  • Maximum Vce (sat): 150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
  • Collector Cut-off Current (Max): 1μA, 100nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V / 200 @ 1A, 2V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand Status: Balanced

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