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Same model may have multiple batches, images only for reference.
PBSS4112PAN,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4112PAN,115

Part No PBSS4112PAN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 120V 1A 6HUSON / Trans GP BJT NPN 120V 1A Automotive 6-Pin HUSON EP T/R
Datasheet
PBSS4112PAN,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 120V
Vce Saturation (Maximum) @ Ib, Ic 120mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 60 @ 500mA, 2V
Power - Max 510mW
Frequency - Transition 120MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 6-UDFN Exposed Pad
Manufacturer Package DFN2020-6
Win Source Part Number 791388-PBSS4112PAN,115
Popularity Medium
Supply and Demand Status Limited
Family Name PBSS4112PAN
Introduction Date November 29, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian PBSS4112PAN,115 CAD Model

Description

The Nexperia USA Inc. PBSS4112PAN is a 6-UDFN Exposed Pad packaged, dual NPN transistor. The transistor type is NPN and the frequency transition is 120MHz. The maximum power it can handle is 510mW and the maximum voltage for collector emitter breakdown is 120V. The device has a DC current gain of 60 @ 500mA and 2V. The current collector cutoff is 100nA. The PBSS4112PAN is a discrete semiconductor product that belongs to the PBSS4112PAN family. It is suitable for use in SMD mounting applications. The operating temperature range of the device is 150 degrees Celsius. The PBSS4112PAN is compliant with halogen-free regulations and is manufactured in China. The estimated EOL date for this product is 2029.

  • Transistor Type: NPN
  • Frequency Transition: 120MHz
  • Maximum Power: 510mW
  • Collector Emitter Breakdown Voltage: 120V
  • DC Current Gain: 60 @ 500mA, 2V
  • Current Collector Cutoff: 100nA
  • Operating Temperature: 150°C

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140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
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