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Same model may have multiple batches, images only for reference.
PBSS4140U,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4140U,135

Part No PBSS4140U,135
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 1A SOT323
Datasheet
PBSS4140U,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 300 @ 500mA, 5V
Maximum Power Dissipation 350mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1086468-PBSS4140U,135
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS4140U,135 CAD Model

Description

The Nexperia USA Inc. PBSS4140U,135 is a high-performance NPN transistor designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • Maximum Collector Current: 1A
  • Collector-Emitter Saturation Voltage: 500mV @ 100mA and 1A
  • Typical Gain: 300 @ 500mA and 5V

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