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Same model may have multiple batches, images only for reference.
PBSS4240DPN,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4240DPN,115

Part No PBSS4240DPN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 6TSOP
Datasheet
PBSS4240DPN,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 1.35A, 1.1A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 200mA, 2A / 530mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 300 @ 500mA, 5V / 300 @ 100mA, 5V
Maximum Power Dissipation 1.1W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086476-PBSS4240DPN,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PBSS4240DPN,115 CAD Model

Description

The PBSS4240DPN,115 is a transistor from Nexperia USA Inc. with a maximum current collector of 1.35A and 1.1A for NPN and PNP, respectively.

  • Maximum Current Collector (NPN): 1.35A
  • Maximum Current Collector (PNP): 1.1A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
  • Maximum Power Dissipation: 1.1W
  • Package: 6-TSOP
  • Temperature Range: 150°C (TJ)
  • Typical Gain (hFE) (Min) (NPN): 300 @ 500mA, 5V
  • Typical Gain (hFE) (Min) (PNP): 300 @ 100mA, 5V
  • Maximum Vce (sat) (NPN): 400mV @ 200mA, 2A
  • Maximum Vce (sat) (PNP): 530mV @ 200mA, 2A

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2818 $57.7690
500+ $0.2310 $115.5000
775+ $0.2241 $173.6775
1,065+ $0.2171 $231.2115
1,375+ $0.2102 $289.0250
1,845+ $0.1883 $347.4135
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