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Same model may have multiple batches, images only for reference.
PBSS4330PA,115
Same model may have multiple batches, images only for reference.

PBSS4330PA,115

Part No PBSS4330PA,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 3A 3HUSON
Datasheet
PBSS4330PA,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 1A, 2V
Power - Max 2.1 W
Frequency - Transition 210MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2)
Base Product Number PBSS4330
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1377074-PBSS4330PA,115
Ultra Librarian 3D Model Ultra Librarian PBSS4330PA,115 CAD Model

Description

The PBSS4330PA is a NPN bipolar transistor used in discrete semiconductor products.

  • Transistor Type: NPN
  • Mounting Type: Surface Mount
  • Package / Case: 3-PowerUDFN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1A, 2V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA

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