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Same model may have multiple batches, images only for reference.
PBSS5130T,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS5130T,215

Part No PBSS5130T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 1A SOT23
Datasheet
PBSS5130T,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 225mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 260 @ 500mA, 2V
Maximum Power Dissipation 480mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086500-PBSS5130T,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS5130T,215 CAD Model

Description

The Nexperia USA Inc. PBSS5130T,215 is a PNP transistor that belongs to the discrete semiconductor products category.

  • Package Type: TO-236AB (SOT23)
  • Maximum Collector Current: 1A
  • Temperature Range: 150°C
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Power Dissipation: 480mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1045 $50.1600
1,025+ $0.0979 $100.3475
1,590+ $0.0946 $150.4140
2,275+ $0.0880 $200.2000
2,955+ $0.0847 $250.2885
3,690+ $0.0814 $300.3660
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