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Same model may have multiple batches, images only for reference.
PBSS9110Y,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS9110Y,115

Part No PBSS9110Y,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 1A 6TSSOP
Datasheet
PBSS9110Y,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 320mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 150 @ 500mA, 5V
Maximum Power Dissipation 625mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1086546-PBSS9110Y,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS9110Y,115 CAD Model

Description

The Nexperia USA PBSS9110Y,115 is a PNP transistor with a maximum collector-emitter breakdown voltage of 100V and a maximum current collector of 1A.

  • Maximum Collector-Emitter Breakdown Voltage: 100V
  • Maximum Current Collector: 1A
  • Package: 6-TSSOP
  • Typical Gain (hFE): 150 @ 500mA and 5V
  • Maximum Power Dissipation: 625mW
  • Category: Discrete semiconductor products
  • Frequency Transition: 100MHz
  • Collector Cut-off Current (max): 100nA
  • Maximum Vce (sat): 320mV @ 100mA and 1A
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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