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Same model may have multiple batches, images only for reference.
PSMN2R4-30YLDX Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R4-30YLDX

Part No PSMN2R4-30YLDX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK / Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Datasheet
PSMN2R4-30YLDX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 31.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2256pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 106W (Tc)
Rds On (Maximum) @ Id, Vgs 2.4 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package LFPAK56, Power-SO8
Package SC-100, SOT-669
Win Source Part Number 792622-PSMN2R4-30YLDX
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN2R4-30YLD
Introduction Date July 28, 2013
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian PSMN2R4-30YLDX CAD Model

Description

The Nexperia USA Inc. PSMN2R4-30YLDX is a N-channel MOSFET with a drain source voltage of 30V.

  • Maximum Power Dissipation: 106W (Tc)
  • Package / Case: LFPAK56, Power-SO8
  • Mounting Type: Surface Mount
  • Maximum Continuous Drain Current: 100A (Tc)
  • Maximum Gate Charge: 31.3nC @ 10V
  • Maximum Input Capacitance: 2256pF @ 15V
  • Maximum Rds On: 2.4 mOhm @ 25A, 10V
  • RoHS Compliant: Yes
  • Halogen Free: Yes
  • Estimated EOL Date: 2029

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