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Same model may have multiple batches, images only for reference.
PDTC114TU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC114TU,115

Part No PDTC114TU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
PDTC114TU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 200 @ 1mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087207-PDTC114TU,115
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian PDTC114TU,115 CAD Model

Description

The Nexperia USA Inc. PDTC114TU,115 is an NPN Pre-Biased Transistor that comes in an SOT-323-3 package.

  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Typical Gain: 200 @ 1mA and 5V
  • Operating Temperature Range: -40°C to 125°C
  • Commonly Used: In industrial and power management applications.

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