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Same model may have multiple batches, images only for reference.
PDTC123YM,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC123YM,315

Part No PDTC123YM,315
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SOT883
Datasheet
PDTC123YM,315 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package DFN1006-3
Win Source Part Number 1087217-PDTC123YM,315
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC123YM,315 CAD Model

Description

The Nexperia USA Inc. PDTC123YM,315 is a discrete semiconductor product that comes in a DFN1006-3 package.

  • Transistor Type: NPN-prebiased
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 500µA, 10mA
  • Collector Cut-Off Current (Max): 1µA
  • Typical Gain (hFE) (min): 35 @ 5mA, 5V
  • Maximum Power Dissipation: 250mW
  • Status: Active
  • Supply and Demand Status: Balanced

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