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PDTD114ETR

Part No PDTD114ETR
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 0.425W / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 225 MHz 320 mW Surface Mount TO-236AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 225 MHz
Power - Max 320 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Base Product Number PDTD114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 1727-7552-2,1727-7552-1,1727-7552-6,934031040215,PDTD114ETR-ND
Standard Package 3,000
Win Source Part Number 1112033-PDTD114ETR
Ultra Librarian 3D Model Ultra Librarian PDTD114ETR CAD Model

Description

The Nexperia PDTD114ETR is a pre-biased NPN transistor with a power rating of 320 mW.

  • Power - Max: 320 mW
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Current - Collector (Ic) (Max): 500 mA
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Frequency - Transition: 225 MHz
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
  • Operating Temperature: -40°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,205+ $0.0415 $50.0075
2,935+ $0.0341 $100.0835
4,550+ $0.0330 $150.1500
6,270+ $0.0319 $200.0130
8,095+ $0.0309 $250.1355
10,835+ $0.0277 $300.1295
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Availability: 5,500 pieces
MOQ: 1205 pcs
Order Increment : 1 pcs
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