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Same model may have multiple batches, images only for reference.
PEMD12,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMD12,315

Part No PEMD12,315
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT666
Datasheet
PEMD12,315 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1075704-PEMD12,315
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PEMD12,315 CAD Model

Description

The Nexperia USA Inc. PEMD12,315 is a pre-biased dual NPN and PNP transistor with a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA.

  • Maximum Collector-Emitter Voltage: 50V
  • Maximum Collector Current: 100mA
  • Typical Gain: 80 @ 5mA and 5V
  • Collector Cut-Off Current: 1μA
  • Saturation Voltage: 150mV @ 500μA and 10mA
  • Applications: Audio amplifiers, signal processing, and power management
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 300mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,090+ $0.0531 $57.8790
2,650+ $0.0437 $115.8050
4,100+ $0.0423 $173.4300
5,650+ $0.0409 $231.0850
7,290+ $0.0397 $289.4130
9,775+ $0.0355 $347.0125
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