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Same model may have multiple batches, images only for reference.
PHD38N02LT,118 Real Image
Same model may have multiple batches, images only for reference.

PHD38N02LT,118

Part No PHD38N02LT,118
Manufacturer Nexperia USA Inc.
Catalog FETs - Single
Description MOSFET N-CH 20V 44.7A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 44.7A
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Maximum) at Id, Vgs 16mOhm at 25A, 5V
Gate Source Voltage(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 15.1nC at 5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 20V
Power Dissipation (Maximum) 57.6W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 733372-PHD38N02LT,118
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHD38N02LT,118 CAD Model

Description

The Nexperia USA Inc. PHD38N02LT,118 is an N-channel MOSFET transistor that operates on a drive voltage of 5V.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-channel MOSFET
  • Drive Voltage: 5V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 44.7A
  • Rds On (Maximum) @ Id, Vgs: 16mOhm @ 25A, 5V
  • Gate Source Voltage(th) (Maximum) @ Id: 1.5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 15.1nC @ 5V
  • Mounting Type: SMD (SMT)
  • Package: DPAK
  • Maximum Power Dissipation: 57.6W
  • Application: Discrete Semiconductor Products
  • Popularity: Low
  • Supply and Demand Status: Sufficient
  • Manufacturer Pack Quantity: 2,500
  • MSL Level: 1 (Unlimited)

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